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Diodes Incorporated DMN3190LDW-13 — Discrete Semiconductors

Diodes Incorporated DMN3190LDW-13

MPNDMN3190LDW-13
Active
$0.4700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3190LDW-13 specifications
ParameterValue
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C1A
Power - max320mW
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id2.8V @ 250µA
Rds on (Max) @ id, vgs190mOhm @ 1.3A, 10V
Gate charge (Qg) (Max) @ vgs2nC @ 10V
Input capacitance (Ciss) (Max) @ vds87pF @ 20V