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Diodes Incorporated DMN313DLT-7 — Discrete Semiconductors

Diodes Incorporated DMN313DLT-7

MPNDMN313DLT-7
Active

MOSFET N-CH 30V 270MA SOT523

$0.3100Ref. price · indicative, final on quote
PackagingSOT-523
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN313DLT-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C270mA (Ta)
Power dissipation280mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-523
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs2Ohm @ 10mA, 4V
Gate charge (Qg) (Max) @ vgs0.5 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds36.3 pF @ 5 V