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Diodes Incorporated DMN3069L-7 — Discrete Semiconductors

Diodes Incorporated DMN3069L-7

MPNDMN3069L-7
Active
$0.4100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3069L-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C5.3A (Ta)
Power dissipation800mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.8V @ 250µA
Rds on (Max) @ id, vgs30mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs8.1 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds309 pF @ 15 V