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DMN3061SVT-13

Diodes Incorporated DMN3061SVT-13

MPNDMN3061SVT-13
Active
$0.1244Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3061SVT-13 specifications
ParameterValue
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C3.4A (Ta)
Power - max880mW
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
FET featureStandard
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id1.8V @ 250µA
Rds on (Max) @ id, vgs60mOhm @ 3.1A, 10V
Gate charge (Qg) (Max) @ vgs6.6nC @ 10V
Input capacitance (Ciss) (Max) @ vds278pF @ 15V