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Diodes Incorporated DMN3061S-13 — Discrete Semiconductors

Diodes Incorporated DMN3061S-13

MPNDMN3061S-13
Active
$0.0632Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3061S-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)3.3V, 10V
Current - continuous drain (Id) @ 25°C2.3A (Ta)
Power dissipation770mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.8V @ 250µA
Rds on (Max) @ id, vgs59mOhm @ 3.1A, 10V
Gate charge (Qg) (Max) @ vgs5.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds233 pF @ 15 V