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Diodes Incorporated DMN3060LVT-13 — Discrete Semiconductors

Diodes Incorporated DMN3060LVT-13

MPNDMN3060LVT-13
Active
$0.1114Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3060LVT-13 specifications
ParameterValue
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C3.6A (Ta)
Power - max830mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id1.8V @ 250µA
Rds on (Max) @ id, vgs60mOhm @ 3.1A, 10V
Gate charge (Qg) (Max) @ vgs11.3nC @ 10V
Input capacitance (Ciss) (Max) @ vds395pF @ 15V