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Diodes Incorporated DMN3055LFDBQ-13 — Discrete Semiconductors

Diodes Incorporated DMN3055LFDBQ-13

MPNDMN3055LFDBQ-13
Active
$0.1194Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3055LFDBQ-13 specifications
ParameterValue
SeriesAutomotive, AEC-Q101
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C5A (Ta)
Power - max810mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Case6-UDFN Exposed Pad
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs40mOhm @ 3A, 4.5V
Gate charge (Qg) (Max) @ vgs11.2nC @ 10V
Input capacitance (Ciss) (Max) @ vds458pF @ 15V