Skip to main content
Diodes Incorporated DMN3052LSS-13 — Discrete Semiconductors

Diodes Incorporated DMN3052LSS-13

MPNDMN3052LSS-13
Obsolete
$0.1343Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3052LSS-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 10V
Current - continuous drain (Id) @ 25°C7.1A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs30mOhm @ 7.1A, 10V
Input capacitance (Ciss) (Max) @ vds555 pF @ 5 V