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Diodes Incorporated DMN3032LFDBQ-13 — Discrete Semiconductors

Diodes Incorporated DMN3032LFDBQ-13

MPNDMN3032LFDBQ-13
Active
$0.1517Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3032LFDBQ-13 specifications
ParameterValue
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C6.2A (Ta)
Power - max1W
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
QualificationAEC-Q101
Case6-UDFN Exposed Pad
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs30mOhm @ 5.8A, 10V
Gate charge (Qg) (Max) @ vgs10.6nC @ 10V
Input capacitance (Ciss) (Max) @ vds500pF @ 15V