DMN3032LE-13

Diodes Incorporated

MOSFET N-CH 30V 5.6A SOT223

Diodes Incorporated DMN3032LE-13
Download datasheet (PDF)
[IN STOCK] In Stock: 2,930 pcs
$0.26/ pc

Volume pricing

Buy Now

Subtotal:$1.30

MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMN3032LE-13 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C5.6A (Ta)
Power dissipation1.8W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs29mOhm @ 3.2A, 10V
Gate charge (Qg) (Max) @ vgs11.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds498 pF @ 15 V
DMN3032LE-13
[ALLOC] verified
Quote