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Diodes Incorporated DMN3032LE-13 — Discrete Semiconductors

DMN3032LE-13 N-Ch MOSFET 30V 5.6A SOT-223 — Diodes Inc | ICBOMS

MPNDMN3032LE-13
Active

MOSFET N-CH 30V 5.6A SOT223

$0.5800Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3032LE-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C5.6A (Ta)
Power dissipation1.8W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs29mOhm @ 3.2A, 10V
Gate charge (Qg) (Max) @ vgs11.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds498 pF @ 15 V