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Diodes Incorporated DMN3022LDG-7 — Discrete Semiconductors

Diodes Incorporated DMN3022LDG-7

MPNDMN3022LDG-7
Active
$0.4086Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3022LDG-7 specifications
ParameterValue
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C7.6A (Ta), 15A (Tc)
Power - max1.96W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
FET featureStandard
Case8-PowerLDFN
Vgs(th) (Max) @ id2.1V @ 250µA, 1.2V @ 250µA
Rds on (Max) @ id, vgs22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V
Gate charge (Qg) (Max) @ vgs3.7nC @ 4.5V, 8nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds481pF @ 15V, 996pF @ 15V