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Diodes Incorporated DMN3021LFDF-7 — Discrete Semiconductors

Diodes Incorporated DMN3021LFDF-7

MPNDMN3021LFDF-7
Active
$0.5300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3021LFDF-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C11.8A (Ta)
Power dissipation2.03W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case6-UDFN Exposed Pad
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs15mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs14 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds706 pF @ 15 V