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Diodes Incorporated DMN3018SSD-13 — Discrete Semiconductors

Diodes Incorporated DMN3018SSD-13

MPNDMN3018SSD-13
Active

MOSFET 2N-CH 30V 6.7A 8SO

$0.5500Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3018SSD-13 specifications
ParameterValue
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C6.7A
Power - max1.5W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.1V @ 250µA
Rds on (Max) @ id, vgs22mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs13.2nC @ 10V
Input capacitance (Ciss) (Max) @ vds697pF @ 15V