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Diodes Incorporated DMN3018SFG-13 — Discrete Semiconductors

Diodes Incorporated DMN3018SFG-13

MPNDMN3018SFG-13
Active

MOSFET N-CH 30V 8.5A PWRDI3333-8

$0.5100Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3018SFG-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C8.5A (Ta)
Power dissipation1W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.1V @ 250µA
Rds on (Max) @ id, vgs21mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs13.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds697 pF @ 15 V