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Diodes Incorporated DMN3016LFDFQ-13 — Discrete Semiconductors

Diodes Incorporated DMN3016LFDFQ-13

MPNDMN3016LFDFQ-13
Active
$0.1102Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3016LFDFQ-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C10A (Ta)
Power dissipation730mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case6-UDFN Exposed Pad
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs12mOhm @ 11A, 10V
Gate charge (Qg) (Max) @ vgs25.1 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1415 pF @ 15 V