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Diodes Incorporated DMN3016LDN-7 — Discrete Semiconductors

Diodes Incorporated DMN3016LDN-7

MPNDMN3016LDN-7
Active
$0.2051Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3016LDN-7 specifications
ParameterValue
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C7.3A
Power - max1.1W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
FET featureLogic Level Gate
Case8-PowerWDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs20mOhm @ 11A, 10V
Gate charge (Qg) (Max) @ vgs25.1nC @ 10V
Input capacitance (Ciss) (Max) @ vds1415pF @ 15V