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Diodes Incorporated DMN3013LFG-13 — Discrete Semiconductors

Diodes Incorporated DMN3013LFG-13

MPNDMN3013LFG-13
Active
$0.3057Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3013LFG-13 specifications
ParameterValue
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C9.5A (Ta), 15A (Tc)
Power - max2.16W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
Case8-PowerLDFN
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs14.3mOhm @ 4A, 8V
Gate charge (Qg) (Max) @ vgs5.7nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds600pF @ 15V