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Diodes Incorporated DMN3012LEG-13 — Discrete Semiconductors

Diodes Incorporated DMN3012LEG-13

MPNDMN3012LEG-13
Active
$0.6737Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMN3012LEG-13 specifications
ParameterValue
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C10A (Ta), 20A (Tc)
Power - max2.2W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
FET featureStandard
Case8-PowerLDFN
Vgs(th) (Max) @ id2.1V @ 250µA, 1.15V @ 250µA
Rds on (Max) @ id, vgs12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Gate charge (Qg) (Max) @ vgs6.1nC @ 4.5V, 12.6nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds850pF @ 15V, 1480pF @ 15V