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Diodes Incorporated DMG8880LK3-13 — Discrete Semiconductors

Diodes Incorporated DMG8880LK3-13

MPNDMG8880LK3-13
Active
$0.2893Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMG8880LK3-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C11A (Ta)
Power dissipation1.68W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.3V @ 250µA
Rds on (Max) @ id, vgs7.5mOhm @ 11.6A, 10V
Gate charge (Qg) (Max) @ vgs27.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1289 pF @ 15 V