Diodes Incorporated DMG6602SVT-7
MPNDMG6602SVT-7
NRND
$0.3800Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 3.4A, 2.8A |
| Power - max | 840mW |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Logic Level Gate, 4.5V Drive |
| Configuration | N and P-Channel |
| Case | SOT-23-6 Thin, TSOT-23-6 |
| Vgs(th) (Max) @ id | 2.3V @ 250µA |
| Rds on (Max) @ id, vgs | 60mOhm @ 3.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 13nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 400pF @ 15V |