DMG6601LVT-7
Diodes Incorporated DMG6601LVT-7
MPNDMG6601LVT-7
Active
$0.4000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N and P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 3.8A, 2.5A |
| Power - max | 850mW |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | SOT-23-6 Thin, TSOT-23-6 |
| Vgs(th) (Max) @ id | 1.5V @ 250µA |
| Rds on (Max) @ id, vgs | 55mOhm @ 3.4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 12.3nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 422pF @ 15V |