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Diodes Incorporated DMG6402LDM-7 — Discrete Semiconductors

Diodes Incorporated DMG6402LDM-7

MPNDMG6402LDM-7
Active

MOSFET N-CH 30V 5.3A SOT26

$0.4200Ref. price · indicative, final on quote
PackagingSOT-23-6
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMG6402LDM-7 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C5.3A (Ta)
Power dissipation1.12W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs27mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs9.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds404 pF @ 15 V