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Diodes Incorporated DMG5802LFX-7 — Discrete Semiconductors

Diodes Incorporated DMG5802LFX-7

MPNDMG5802LFX-7
Active

MOSFET 2N-CH 24V 6.5A 6DFN

$0.6400Ref. price · indicative, final on quote
Packaging6-VFDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMG5802LFX-7 specifications
ParameterValue
MountingSurface Mount
Drain to source voltage24V
Current - continuous drain (Id) @ 25°C6.5A
Power - max980mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual) Common Drain
Case6-VFDFN Exposed Pad
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs15mOhm @ 6.5A, 4.5V
Gate charge (Qg) (Max) @ vgs31.3nC @ 10V
Input capacitance (Ciss) (Max) @ vds1066.4pF @ 15V