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Diodes Incorporated DMG4812SSS-13 — Discrete Semiconductors

Diodes Incorporated DMG4812SSS-13

MPNDMG4812SSS-13
Obsolete
$0.5100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMG4812SSS-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C8A (Ta)
Power dissipation1.54W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
FET featureSchottky Diode (Body)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.3V @ 250µA
Rds on (Max) @ id, vgs15mOhm @ 10.7A, 10V
Gate charge (Qg) (Max) @ vgs18.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1849 pF @ 15 V