Skip to main content
Diodes Incorporated DMG4800LSD-13 — Discrete Semiconductors

Diodes Incorporated DMG4800LSD-13

MPNDMG4800LSD-13
Active
$0.5800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMG4800LSD-13 specifications
ParameterValue
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C7.5A
Power - max1.17W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1.6V @ 250µA
Rds on (Max) @ id, vgs16mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs8.56nC @ 5V
Input capacitance (Ciss) (Max) @ vds798pF @ 10V