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Diodes Incorporated DMG4800LK3-13 — Discrete Semiconductors

Diodes Incorporated DMG4800LK3-13

MPNDMG4800LK3-13
Active
$0.6000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMG4800LK3-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C10A (Ta)
Power dissipation1.71W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id1.6V @ 250µA
Rds on (Max) @ id, vgs17mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs8.7 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds798 pF @ 10 V