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Diodes Incorporated DMG4468LFG — Discrete Semiconductors

Diodes Incorporated DMG4468LFG

MPNDMG4468LFG
End of Life
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMG4468LFG specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C7.62A (Ta)
Power dissipation990mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerUDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs15mOhm @ 11.6A, 10V
Gate charge (Qg) (Max) @ vgs18.85 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds867 pF @ 10 V