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Diodes Incorporated DMG1016VQ-7 — Discrete Semiconductors

Diodes Incorporated DMG1016VQ-7

MPNDMG1016VQ-7
Active

MOSFET N/P-CH 20V 0.87A SOT563

$0.4600Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMG1016VQ-7 specifications
ParameterValue
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C870mA, 640mA
Power - max530mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
ConfigurationN and P-Channel
CaseSOT-563, SOT-666
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs400mOhm @ 600mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.74nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds60.67pF @ 16V