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Diodes Incorporated DMG1016UDW-7 — Discrete Semiconductors

Diodes Incorporated DMG1016UDW-7

MPNDMG1016UDW-7
Active
$0.4700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMG1016UDW-7 specifications
ParameterValue
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C1.07A, 845mA
Power - max330mW
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs450mOhm @ 600mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.74nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds60.67pF @ 10V