DMG1012T-7

Diodes Incorporated

MOSFET N-CH 20V 630MA SOT-523

Diodes Incorporated DMG1012T-7
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMG1012T-7 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C630mA (Ta)
Power dissipation280mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±6V
TechnologyMOSFET (Metal Oxide)
CaseSOT-523
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs400mOhm @ 600mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.74 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds60.67 pF @ 16 V
DMG1012T-7
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