Diodes Incorporated DMG1012T-7
MPNDMG1012T-7
Active
MOSFET N-CH 20V 630MA SOT-523
$0.3300Ref. price · indicative, final on quote
PackagingSOT-523
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 630mA (Ta) |
| Power dissipation | 280mW (Ta) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±6V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-523 |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 400mOhm @ 600mA, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 0.74 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 60.67 pF @ 16 V |