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Diodes Incorporated DGD2117S8-13 — DC-DC Power Modules

Diodes Incorporated DGD2117S8-13

MPNDGD2117S8-13
End of Life

IC GATE DRVR HIGH-SIDE 8SO

$2.15Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DGD2117S8-13 specifications
ParameterValue
Gate typeIGBT, N-Channel MOSFET
Input typeNon-Inverting
Channel typeSingle
MountingSurface Mount
Supply voltage10V ~ 20V
Logic voltage - VIL, VIH6V, 9.5V
High side voltage - max (Bootstrap)600 V
Current - peak output (Source, sink)290mA, 600mA
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers1
Driven configurationHigh-Side
Rise (Fall time)75ns, 35ns