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Diodes Incorporated DGD2106MS8-13 — Analog & Data Acquisition

Diodes Incorporated DGD2106MS8-13

MPNDGD2106MS8-13
End of Life

IC GATE DRV HALF-BRIDGE 8SO 2.5K

$1.79Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DGD2106MS8-13 specifications
ParameterValue
Gate typeIGBT, N-Channel MOSFET
Input typeNon-Inverting
Channel typeSynchronous
MountingSurface Mount
Supply voltage10V ~ 20V
Logic voltage - VIL, VIH0.6V, 2.5V
High side voltage - max (Bootstrap)600 V
Current - peak output (Source, sink)290mA, 600mA
Operating temperature-40°C ~ 125°C (TA)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)100ns, 35ns