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Diodes Incorporated DGD2101MS8-13 — Discrete Semiconductors

Diodes Incorporated DGD2101MS8-13

MPNDGD2101MS8-13
End of Life

IC GATE DRVR HI/LO-SIDE 8SO 2.5K

$1.33Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DGD2101MS8-13 specifications
ParameterValue
Gate typeIGBT, N-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage10V ~ 20V
Logic voltage - VIL, VIH0.8V, 2.5V
High side voltage - max (Bootstrap)600 V
Current - peak output (Source, sink)290mA, 600mA
Operating temperature-40°C ~ 125°C (TA)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHigh-Side or Low-Side
Rise (Fall time)70ns, 35ns