DGD2101MS8-13

Diodes Incorporated

IC GATE DRVR HI/LO-SIDE 8SO 2.5K

Diodes Incorporated DGD2101MS8-13
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[IN STOCK] In Stock: 6 pcs
$2.03/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DGD2101MS8-13 specifications
Parameter / AttributeSpecification / Value
Gate typeIGBT, N-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage10V ~ 20V
Logic voltage - VIL, VIH0.8V, 2.5V
High side voltage - max (Bootstrap)600 V
Current - peak output (Source, sink)290mA, 600mA
Operating temperature-40°C ~ 125°C (TA)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHigh-Side or Low-Side
Rise (Fall time)70ns, 35ns
DGD2101MS8-13
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