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Diodes Incorporated DDTA113TE-7-F — Discrete Semiconductors

Diodes Incorporated DDTA113TE-7-F

MPNDDTA113TE-7-F
Active
$0.0512Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DDTA113TE-7-F specifications
ParameterValue
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce100 @ 1mA, 5V
Power - max150 mW
Frequency - transition250 MHz
PackageTape & Reel (TR) Cut Tape (CT)
CaseSOT-523
Resistor - base (R1)1 kOhms
Vce saturation (Max) @ ib, ic300mV @ 1mA, 10mA