2N7002-13-F

Diodes Incorporated

Diodes Incorporated 2N7002-13-F
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MOQ 5 · Bulk · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

2N7002-13-F specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C170mA (Ta)
Power dissipation370mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs5Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs0.23 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds50 pF @ 25 V
2N7002-13-F
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