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Diodes Incorporated 1N5818M-13 — Discrete Semiconductors

Diodes Incorporated 1N5818M-13

MPN1N5818M-13
Obsolete
$2.5800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N5818M-13 specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)30 V
Voltage - forward (Vf) (Max) @ if550 mV @ 1 A
Current - reverse leakage @ vr1 mA @ 30 V
Current - average rectified1A
Operating temperature - junction-60°C ~ 125°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR)
TechnologySchottky
CaseDO-213AB, MELF (Glass)