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Diodes Incorporated 1N5404G-T — Discrete Semiconductors

Diodes Incorporated 1N5404G-T

MPN1N5404G-T
Active

DIODE GEN PURP 400V 3A DO201AD

$0.3700Ref. price · indicative, final on quote
PackagingDO-201AD, Axial
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N5404G-T specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)400 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 3 A
Current - reverse leakage @ vr5 µA @ 400 V
Current - average rectified3A
Operating temperature - junction-65°C ~ 150°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyStandard
CaseDO-201AD, Axial
Capacitance @ vr,40pF @ 4V, 1MHz
Reverse recovery time2 µs