300 MHz DDR II SRAM for high-throughput buffer applications
The CY7C1623KV18-300BZXC: 144Mbit synchronous DDR II SRAM organized as 8M x 18 bits, clocked at 300 MHz over a parallel interface. Volatile memory for buffer applications.
8M x 18 organization — why 18 bits
The 18-bit word width (8M x 18) is common in networking and baseband designs where a 16-bit data bus plus two parity or ECC bits are needed. If the design expects a 9-bit-wide word (16M x 9), the CY7C1625KV18-333BZXC is the sibling that matches that organization. The 18-bit width here means the controller must be wired for 18 data lines, not 9 — a board-level difference that is not pin-compatible without a layout change.
165-FBGA footprint — design-in constraint
165-ball FBGA (15x17 mm) fine-pitch BGA. Verify ball-out against PCB footprint before layout. Bulk pack arrives in tubes or trays.
For a BOM freeze, this part does not trigger a PCN watch on its own — but the 300 MHz speed grade is a specific bin, and if the design can tolerate the 333 MHz part, that bin may have a longer tail in production.