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Cypress Semiconductor Corp CY7C15632KV18-500BZXI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C15632KV18-500BZXI SRAM, 72Mbit QDR II+, 500 MHz

MPNCY7C15632KV18-500BZXI
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Infineon CY7C15632KV18-500BZXI, 72Mbit Synchronous QDR II+ SRAM, 4M x 18 organization, 500 MHz clock, Parallel interface, 1.7V-1.9V supply, -40°C to 85°C industrial, 165-FBGA (13x15 mm) tray.

$218.8260Ref. price · indicative, final on quote
Cypress Semiconductor Corp CY7C15632KV18-500BZXI datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C15632KV18-500BZXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency500 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II+
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 18

Product details

It operates at a 500 MHz clock rate, which translates to a peak data rate that keeps up with high-throughput switch fabrics, network processors, and telecom line-card buffers. The QDR II+ interface eliminates the dead cycle between read and write operations — every clock edge carries valid data, so back-to-back transactions don't stall the bus. That matters in designs where latency and sustained throughput are the binding constraints, not average bandwidth.

This is a high-speed synchronous SRAM specified into networking, telecom, and industrial compute applications where the QDR II+ bus architecture and 500 MHz clock rate are the deciding fit criteria. The 4M x 18 organization pairs naturally with 18-bit-wide processor buses that carry parity or ECC. The industrial temperature grade extends the deployment envelope beyond climate-controlled racks into outdoor and factory environments.

Frequently asked questions

What is the closest functional alternative to CY7C15632KV18-500BZXI?

The CY7C25632KV18-400BZXI is the closest functional sibling: same 72 Mbit density, same 4M x 18 organization, same 165-FBGA footprint and industrial temperature range, but clocked at 400 MHz instead of 500 MHz. It is a speed-bin alternative, not a second source — the 400 MHz part drops in without a board change if the 500 MHz timing cannot be closed.

What package does CY7C15632KV18-500BZXI come in?

The CY7C15632KV18-500BZXI is supplied in a 165-ball FBGA package measuring 13x15 mm, on tray. The footprint is standard for high-density synchronous SRAMs in this density class.

What technology is CY7C15632KV18-500BZXI based on?

The CY7C15632KV18-500BZXI is a synchronous SRAM using the QDR II+ architecture, which provides separate read and write data ports to eliminate bus turnaround dead cycles. It is a volatile memory with a parallel interface.

Will CY7C15632KV18-500BZXI drop into a board designed for CY7C25632KV18-400BZXI?

Yes, the CY7C15632KV18-500BZXI shares the same 165-FBGA footprint, 1.7V-1.9V supply range, and 4M x 18 organization as the CY7C25632KV18-400BZXI. It is a drop-in replacement at the board level — no PCB changes needed. The only difference is the 500 MHz clock rate vs 400 MHz, so the board must be designed to support the higher speed.