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Cypress Semiconductor Corp CY7C1520AV18-200BZI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1520AV18-200BZI 72Mbit DDR-II SRAM, 200 MHz

MPNCY7C1520AV18-200BZI
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Infineon CY7C1520AV18-200BZI, 72Mbit synchronous DDR-II SRAM, 200 MHz, 1.7–1.9 V VDD, 2M x 36 parallel interface, 165-FBGA (15×17 mm), –40 to 85 °C operating temperature, bulk pack.

$102.2300Ref. price · indicative, final on quote
Cypress Semiconductor Corp CY7C1520AV18-200BZI datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1520AV18-200BZI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency200 MHz
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageBulk
TechnologySRAM - Synchronous, DDR II
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 36

Product details

72 Mbit DDR-II SRAM at 200 MHz — bus timing and buffer depth

The Infineon CY7C1520AV18-200BZI is a 72 Mbit synchronous DDR-II SRAM organized as 2M x 36 bits, clocked at 200 MHz over a parallel interface. The 1.7 V to 1.9 V core supply and -40 to 85 °C temperature range suit industrial applications.

At 200 MHz the DDR-II interface transfers data on both clock edges. The synchronous double-data-rate architecture eliminates dead cycles on back-to-back reads and writes.

Package and footprint — 165-FBGA (15x17 mm)

The 165-ball FBGA measures 15 mm by 17 mm, a standard high-density SRAM footprint. Board layout must route the 36 data lines plus address and control signals with matched trace lengths to maintain setup/hold margins at 200 MHz. The fine-pitch BGA requires micro-via or blind-via stack-ups on anything above two layers; a four-layer PCB with a dedicated VDD plane and ground plane is the typical starting point.