Infineon CY7C1515KV18-250BZXC, QDR II synchronous SRAM, 72 Mbit (2M x 36), 250 MHz clock, parallel interface, 1.7-1.9V supply, 165-FBGA (13x15), commercial temperature 0°C to 70°C.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 1.7V ~ 1.9V |
| Clock frequency | 250 MHz |
| Memory interface | Parallel |
| Operating temperature | 0°C ~ 70°C (TA) |
| Package | Bulk |
| Technology | SRAM - Synchronous, QDR II |
| Memory size | 72Mbit |
| Memory format | SRAM |
| Case | 165-LBGA |
| Memory organization | 2M x 36 |
If the design needs to survive an unventilated enclosure or outdoor cabinet, the industrial-temperature sibling CY7C1515KV18-250BZXI covers -40°C to 85°C in the same package and pinout.
Supplied in a 165-ball FBGA (13x15 mm), surface-mount. The 1.7 V to 1.9 V core supply is separate from the I/O voltage; verify the VDDQ rail matches the FPGA or ASIC bank voltage.
QDR II operates at clock rates up to 333 MHz with a 4-word burst, while QDR II+ extends to 550 MHz and adds a 2-word burst option for reduced latency. The CY7C1515KV18-250BZXC is a QDR II device, so it uses the 4-word burst at 250 MHz.
The part is supplied in a Bulk package; RoHS compliance is standard for Infineon's current production. Verify the specific date/lot code on the RFQ if compliance documentation is required.
No official replacement has been announced. The industrial-temperature variant CY7C1515KV18-250BZXI is pin-compatible and functionally identical, differing only in temperature range. For higher speed, the CY7C1520KV18-333BZXC offers 333 MHz in the same density and package.
The pinout is defined in the Infineon datasheet for the CY7C1515 family. The 165-FBGA ball map is shared across the 72 Mbit QDR II density options; confirm the specific ball assignment against the datasheet before layout.