Infineon CY7C1514KV18-300BZXI, 72Mbit QDR II synchronous SRAM, 300 MHz clock, 2M x 36 organization, 1.7-1.9V supply, industrial -40 to 85°C, 165-FBGA.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 1.7V ~ 1.9V |
| Clock frequency | 300 MHz |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Bulk |
| Technology | SRAM - Synchronous, QDR II |
| Memory size | 72Mbit |
| Memory format | SRAM |
| Case | 165-LBGA |
| Memory organization | 2M x 36 |
The 300 MHz clock rate enables back-to-back read and write operations on separate data ports, eliminating bus-turnaround dead cycles.
The 165-FBGA package is surface-mount only; no socketed option, so the board must survive reflow and the thermal cycling of the end environment.
Yes, the CY7C1514KV18-300BZXI shares the same 165-FBGA footprint, 2M x 36 organization, and 1.7V supply as the CY7C1515KV18-250BZXI, so it is a pin-compatible drop-in. The only difference is the 300 MHz clock rate versus 250 MHz — the faster part runs at the slower speed if the system clock is set lower, but not the reverse.
The technology is SRAM - Synchronous, QDR II, a double-data-rate architecture with separate read and write ports that eliminate bus-turnaround dead cycles.