CY7C1513KV18-200BZXI Cypress 72 Mbit QDR-II SRAM, 200 MHz, 165-FBGA
Cypress (Infineon) CY7C1513KV18-200BZXI — 72 Mbit synchronous QDR-II SRAM, 200 MHz clock, 1.7 V supply, 4M x 18 organization, 165-FBGA (13x15 mm) surface-mount package, -40 to 85 °C industrial temperature grade.
Specifications
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 1.7V ~ 1.9V |
| Clock frequency | 200 MHz |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Bulk |
| Technology | SRAM - Synchronous, QDR II |
| Memory size | 72Mbit |
| Memory format | SRAM |
| Case | 165-LBGA |
| Memory organization | 4M x 18 |
Frequently asked questions
Is the CY7C1513KV18-200BZXI pin-replaceable by the CY7C1543KV18-400BZI without PCB layout changes?
Both parts share the same 4M x 18 organization and 1.7 V supply, but the 400 MHz part demands significantly tighter signal integrity margins on clock and data traces. A board validated at 200 MHz is not automatically characterized at 400 MHz — the memory controller must also be rated for that frequency. Pinout compatibility is not the gating factor; timing margin at the higher clock rate is.
Does the 200 MHz clock give sufficient burst headroom, or do I need the 250 MHz variant?
QDR-II delivers two transfers per clock cycle, so the 200 MHz part produces 400 MT/s effective bandwidth. If the signal processing path runs near that ceiling — sustained FFT buffers, high-rate data logging — the 250 MHz variant (CY7C1513KV18-250BZI) offers 500 MT/s with the same org and supply. The 200 MHz part is not a degraded part; it is a speed cut of the same die.