Specs side by side
2 parts compared · 19 differing specs across 19 total parameters.
| Parameter | ||
|---|---|---|
| Operating temperature | - | -55°C~175°C(TJ) |
| Drain To Source Voltage | - | 100 V |
| Drive Voltage (max Rds On, Min Rds On) | - | 10V |
| Case | TO-220AB | TO-220-3 |
| Package | - | Tube |
| Component Category | P-Channel Power MOSFETs | - |
| Current - Continuous Drain (id) @ 25°C | - | 19A (Tc) |
| Fet Type | - | P-Channel |
| Gate Charge (qg) (max) @ Vgs | - | 61 nC @ 10 V |
| Input Capacitance (ciss) (max) @ Vds | - | 1400 pF @ 25 V |
| Market Reality | The P-channel TO-220 row is the high-side switch of practical electronics: loads that must sit above ground and switch on the positive rail, driven straight from logic with a level-shifting transistor and no bootstrap - the circuit simplicity that keeps these parts alive in 12V and 24V designs. The IRF9540 is the classic -100V face of the row (the P-counterpart of the IRF540 lineage) and its on-resistance shows the age; the IRF4905 is the modern brute (-74A at 20 milliohms, but only -55V) and the IRF5210 the middle ground that keeps the 100V rating with triple the original conductance. All three are standard-drive parts, and every substitution in this row is decided by two numbers: rail voltage and the gate drive actually available. | - |
| Mounting | - | Through Hole |
| Power Dissipation | - | 150W (Tc) |
| Rds On (max) @ Id, Vgs | - | 200mOhm @ 11A, 10V |
| Role In Circuit | Original Reference Part | - |
| Sourcing Status | Active Shenzhen Spot Sourcing (24–48h) | - |
| Technology | - | MOSFET (Metal Oxide) |
| Vgs | - | ±20V |
| Vgs(th) (max) @ Id | - | 4V @ 250µA |