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Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

AON7532E specifications
ParameterValue
SeriesAlphaMOS
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C30.5A (Ta), 28A (Tc)
Power dissipation5W (Ta), 28W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SMD, Flat Lead
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs3.5mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs40 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1950 pF @ 15 V