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Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

AON6411_001 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 10V
Current - continuous drain (Id) @ 25°C47A (Ta), 85A (Tc)
Power dissipation7.3W (Ta), 156W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-PowerSMD, Flat Leads
Vgs(th) (Max) @ id1.3V @ 250µA
Rds on (Max) @ id, vgs2.1mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs330 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds10290 pF @ 10 V