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Yangzhou Yangjie Electronic Technology Co.,Ltd S8550-H — Discrete Semiconductors

Yangzhou Yangjie Electronic Technology Co.,Ltd S8550-H

MPNS8550-H
Active
$0.2100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

S8550-H specifications
ParameterValue
MountingThrough Hole
FET typePNP
Voltage - collector emitter breakdown25 V
Current - collector (Ic)500 mA
Current - collector cutoff100nA
DC current gain (hFE) (Min) @ ic, vce200 @ 50mA, 1V
Power - max300 mW
Frequency - transition150MHz
Operating temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Vce saturation (Max) @ ib, ic600mV @ 50mA, 500mA