Wolfspeed, Inc. C6D10065Q-TR
MPNC6D10065Q-TR
Active
DIODE SIL CARBIDE 650V 39A 4QFN
$4.68Ref. price · indicative, final on quote
Packaging4-PowerVQFN
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 650 V |
| Voltage - forward (Vf) (Max) @ if | 1.5 V @ 10 A |
| Current - reverse leakage @ vr | 50 µA @ 650 V |
| Current - average rectified | 39A |
| Operating temperature - junction | -55°C ~ 175°C |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | SiC (Silicon Carbide) Schottky |
| Case | 4-PowerVQFN |
| Capacitance @ vr, | 611pF @ 0V, 1MHz |