Wolfspeed, Inc. C3M0120065D
MPNC3M0120065D
Active
650V 120M SIC MOSFET
$8.47Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSRoHS Compliant
SeriesC3M™
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | C3M™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 15V |
| Current - continuous drain (Id) @ 25°C | 22A (Tc) |
| Power dissipation | 98W (Tc) |
| Operating temperature | -40°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | +19V, -8V |
| Technology | SiCFET (Silicon Carbide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 3.6V @ 1.86mA |
| Rds on (Max) @ id, vgs | 157mOhm @ 6.76A, 15V |
| Gate charge (Qg) (Max) @ vgs | 28 nC @ 15 V |
| Input capacitance (Ciss) (Max) @ vds | 640 pF @ 400 V |