Wolfspeed, Inc. C3M0065100K
MPNC3M0065100K
Active
SICFET N-CH 1000V 35A TO247-4L
$19.15Ref. price · indicative, final on quote
PackagingTO-247-4
RoHSRoHS Compliant
SeriesC3M™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | C3M™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 1000 V |
| Drive voltage (Max rds on, min rds on) | 15V |
| Current - continuous drain (Id) @ 25°C | 35A (Tc) |
| Power dissipation | 113.5W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | +19V, -8V |
| Technology | SiCFET (Silicon Carbide) |
| Case | TO-247-4 |
| Vgs(th) (Max) @ id | 3.5V @ 5mA |
| Rds on (Max) @ id, vgs | 78mOhm @ 20A, 15V |
| Gate charge (Qg) (Max) @ vgs | 35 nC @ 15 V |
| Input capacitance (Ciss) (Max) @ vds | 660 pF @ 600 V |